16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Start Date : 2015/09/06

Termination date : 2015/09/10

City : Suzhou

Country : CHINA

Website : ‎http://dripxvi.csp.escience.cn/dct/page/70002

Description :

The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP) will be held in Sept. 2015 in Suzhou, China. The first DRIP was held in Montpelier in 1985, established by Prof. J. P. Fillard, and since that time a series of 15 conferences have been held in Europe, Asia and America. It has filled a unique niche in the physics of semiconductor defects, focusing on all aspects, including point, line, planar and volume defects studied by a variety of techniques.

The main topic of DRIP is to present research and developments covering the fields of visualization, imaging, identification, and understanding of defects which affect the operation of semiconductor devices. This comprehensive approach and gathering of experts allows for discussion of the multifaceted effects of growth, processing, device fabrication, performers, and their interrelationships.

With semiconductor technology quick developing, device feature size decreasing, wafer size increasing, material purity level increasing, new materials emerging such as two dimensional materials, and the need for measuring multi-parameter with high space resolution is also increasing, all these present new challenges at every stage of semiconductor technology development. These new challenges will be the focus of DRIP XVI.


Scope of DRIP XVI

Papers are sought for both oral presentations and posters, covering the fundamental aspects of the field and technology development:

  • Physics of point and extended defects in semiconductors: origin, electrical, optical and magnetic properties of defects

  • Diagnostics techniques of crystal growth and processing of semiconductor materials (in-situ and process control)

  • Device imaging and mapping to evaluate performance and reliability

  • Defect analysis in degraded optoelectronic and electronic devices

  • Imaging techniques and instruments (proximity probe, x-ray, electron beam, noncontact electrical, optical and thermal imaging techniques, etc.)

  • New frontiers of atomic-scale-defect assessment (STM, AFM, SNOM, ballistic electron energy microscopy, TEM, etc.)

  • New approaches for multi-physic-parameter characterization with nano-scale space resolution